Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor

Abstract

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed $4\times 10^{12}$ s${}^{-1}$ at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. By Comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from simulataneous occurence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

arXiv comment5 pages, 5 figures

References in corpus (7)

• Graphene plasmonics
• Graphene field effect transistors as room-temperature Terahertz detectors
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Theory of the giant plasmon enhanced second harmonic generation in graphene and semiconductor two-dimensional electron systems
• Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
• Hydrodynamic model for electron-hole plasma in graphene
• Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals

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• Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling
• Plasmonic instabilities and terahertz waves amplification in graphene metamaterials
• Entropy Wave Instability in Dirac and Weyl Semimetals