activity
20052022
most citedRoom Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

85 citations · 485 across the 16 of their papers we have counts for

collaborators

16 papers

physics.optics2022★ 45 cited

Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure

Koichi Tamura, Chao Tang, Daichi Ogiura +7

We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven…

cond-mat.mes-hall2021★ 11 cited

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

V. Ryzhii, M. Ryzhii, A. Satou +3

We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due t…

physics.app-ph2020★ 85 cited

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

Stephane Boubanga-Tombet, Wojciech Knap, Deepika Yadav +6

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz rad…

cond-mat.mes-hall2017★ 55 cited

Auger recombination in Dirac materials: A tangle of many-body effects

Georgy Alymov, Vladimir Vyurkov, Victor Ryzhii +2

The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger rec…

cond-mat.mes-hall2016★ 33 cited

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions

V Ryzhii, M Ryzhii, M S Shur +3

We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform gra…

cond-mat.mes-hall2016★ 11 cited

A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities

Akira Satou, Gen Tamamushi, Kenta Sugawara +3

A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating…