85 citations · 485 across the 16 of their papers we have counts for
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cond-mat.mes-hall2008★ 16 cited
High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor
M. Ryzhii, A. Satou, V. Ryzhii +1
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of a…
cond-mat.mtrl-sci2008★ 57 cited
Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation
A. Satou, F. T. Vasko, V. Ryzhii
We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. T…