85 citations · 485 across the 16 of their papers we have counts for
Showing 2016Show all
3 papers · 1 filter
cond-mat.mes-hall2016★ 33 cited
Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
V Ryzhii, M Ryzhii, M S Shur +3
We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform gra…
cond-mat.mes-hall2016★ 11 cited
A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
Akira Satou, Gen Tamamushi, Kenta Sugawara +3
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating…
cond-mat.mes-hall2016★ 58 cited
Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor
Y. Koseki, V. Ryzhii, T. Otsuji +2
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equati…