High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor

Abstract

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the dc and ac source-drain currents. Using the model developed, we derive explicit analytical formulas for the GNR-FET transconductance as a function of the signal frequency, collision frequency of electrons, and the top gate length. The transition from the ballistic and to strongly collisional electron transport is considered.

7 pages, 7 figures

References in corpus (5)

• Graphene Nano-Ribbon Electronics
• Simulation of Graphene Nanoribbon Field Effect Transistors
• Perfectly Conducting Channel and Universality Crossover in Disordered Nano-Graphene Ribbons
• A Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors
• Green's function approach to transport through a gate-all-around Si nanowire under impurity scattering

Cited by in corpus (4)

• Electronic transport properties of graphene nanoribbons
• Device Model for Graphene Bilayer Field-Effect Transistor
• Extending ballistic graphene FET lumped element models to diffusive devices
• Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation