Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure

Abstract

We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection under periodic electron density modulation conditions with depleted regions and photothermoelectric detection under highly doped conditions without depleted regions. We identified the photothermoelectric detection that we observed as a new type of unipolar mechanism in which only electrons or holes contribute to rectifying the THz radiation under current-driven conditions. These two detection mechanisms coexist in a certain wide transcendent range of the applied bias voltages. It was also clearly manifested that the temporal photoresponse of the plasmonic and photothermoelectric detection are comparably fast on the order of 10 ps, whereas the maximal photoresponsivity of the photothermoelectric detection is almost twice as high as that of the plasmonic detection under the applied biases conditions. These results suggest that the ADGG-EG-FET THz detector will be promising for use in 6G- and 7G-class high-speed wireless communication systems.

References in corpus (7)

• The Raman Fingerprint of Graphene
• Graphene plasmonics
• Graphene photodetectors for high-speed optical communications
• Graphene Plasmonics for Terahertz to Mid-Infrared Applications
• Graphene field effect transistors as room-temperature Terahertz detectors
• Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport
• Giant ratchet magneto-photocurrent in graphene lateral superlattices

Cited by in corpus (10)

• Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers
• Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As${}_x$P${}_{1-x}$ gate layer
• Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
• Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
• Terahertz plasmonic resonances in coplanar graphene nanoribbon structures
• Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
• Terahertz spin ratchet effect in magnetic metamaterials
• THz detection and amplification using plasmonic Field Effect Transistors driven by DC drain currents
• Circular THz ratchets in a 2D-modulated Dirac system
• Rectification and bolometric terahertz radiation detectors based on perforated graphene structures exhibiting plasmonic resonant response