85 citations · 485 across the 16 of their papers we have counts for
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Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
V. Ryzhii, M. Ryzhii, A. Satou +3
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due t…
Auger recombination in Dirac materials: A tangle of many-body effects
Georgy Alymov, Vladimir Vyurkov, Victor Ryzhii +2
The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger rec…
Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
V Ryzhii, M Ryzhii, M S Shur +3
We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform gra…
A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
Akira Satou, Gen Tamamushi, Kenta Sugawara +3
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating…
Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor
Y. Koseki, V. Ryzhii, T. Otsuji +2
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equati…
Carrier-carrier scattering and negative dynamic conductivity in pumped graphene
Dmitry Svintsov, Victor Ryzhii, Akira Satou +2
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to th…