Origin of photoresponse in black phosphorus photo-transistors

Abstract

We study the origin of photocurrent generated in doped multilayer BP photo-transistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photo-thermal processes. The photo-thermoelectric current can be generated up to a $\mu$m away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photo-bolometric current is generated across the whole device, overwhelming the photo-thermoelectric contribution at a moderate bias. The photo-responsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene.

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• Co-existence of size-dependent and size-independent thermal conductivities in single layer black phosphorus
• Ab initio study of electron-phonon interaction in phosphorene
• Thermoelectric power of bulk black-phosphorus
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• Anisotropic exciton Stark shift in black phosphorus
• Thermal Conduction in Single-Layer Black Phosphorus: Highly Anisotropic?
• Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study
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• Limits on the Bolometric response of Graphene due to flicker noise
• Direct Investigation of the Birefringent Optical Properties of Black Phosphorus with Picosecond Interferometry
• Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors
• Molecular monolayer stabilizer for multilayer 2D materials
• Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy