Thermoelectric power of bulk black-phosphorus

Abstract

The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40 % while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work demonstrates the feasibility of black-phosphorus in thermoelectric applications, such as thermal energy scavenging, which typically require devices with high performance at temperatures above room temperature.

arXiv comment3 figures

References in corpus (18)

• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Isolation and characterization of few-layer black phosphorus
• Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Electric field effect in ultrathin black phosphorus
• Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
• Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
• Tunable optical properties of multilayers black phosphorus thin films
• Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
• A black phosphorus photo-detector for multispectral, high-resolution imaging
• Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
• Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
• Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
• Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance
• Origin of photoresponse in black phosphorus photo-transistors

Cited by in corpus (17)

• Photocurrent generation with two-dimensional van der Waals semiconductors
• Black phosphorus: narrow gap, wide applications
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
• Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
• Gate-Tuned Thermoelectric Power in Black Phosphorus
• Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
• High thermoelectric performance can be achieved in black phosphorus
• Thermoelectric transport in monolayer phosphorene
• Effect of the edge states on the conductance and thermopower in Zigzag Phosphorene Nanoribbons
• Thermoelectric properties of armchair phosphorene nanoribbons in the presence of vacancy-induced impurity band
• Enhancement of thermoelectric performance of a nanoribbon made of alpha-${\mathcal{T}}_3$ lattice
• Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study
• Direct Investigation of the Birefringent Optical Properties of Black Phosphorus with Picosecond Interferometry
• Magnetothermoelectric transport properties in phosphorene
• Hydrostatic pressure control of the spin-orbit proximity effect, spin relaxation, and thermoelectricity in a phosphorene-WSe${}_2$ heterostructure
• Anomalous photo-thermal effects in multi-layered semi-Dirac black phosphorus
• Enhanced thermoelectric properties in phosphorene nanorings