Thermoelectric power of bulk black-phosphorus

Abstract

The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40 % while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work demonstrates the feasibility of black-phosphorus in thermoelectric applications, such as thermal energy scavenging, which typically require devices with high performance at temperatures above room temperature.

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• Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study
• Direct Investigation of the Birefringent Optical Properties of Black Phosphorus with Picosecond Interferometry
• Hydrostatic pressure control of the spin-orbit proximity effect, spin relaxation, and thermoelectricity in a phosphorene-WSe${}_2$ heterostructure
• Anomalous photo-thermal effects in multi-layered semi-Dirac black phosphorus
• Enhanced thermoelectric properties in phosphorene nanorings