Electronic and transport properties of anisotropic semiconductor quantum wires
arXiv:2007.04512 · doi:10.1103/PhysRevB.102.045427
Abstract
Within the effective-mass approximation, we theoretically investigated the electronic and transport properties of 2D semiconductor quantum wires (QWs) with anisotropic effective masses and different orientations with respect to the anisotropic axis. The energy levels in the absence and presence of an external magnetic field are analytically calculated, showing: (i) a strong dependence on the spacing of energy levels related to the alignment QW angle and the anisotropy axis; and (ii) for non-null magnetic field, the quantum Hall edge states are significantly affected by the edge orientation. Moreover, by means of the split-operator technique, we analyzed the time evolution of wavepackets in straight and V-shaped anisotropic QWs and compared the transmission probabilities with those of isotropic systems. In the anisotropic case we found damped oscillations in the average values of velocity in both x and y directions for a symmetric Gaussian wavepacket propagating along a straight wide QW, with the oscillation being more evident as the non-collinearity between the group velocity and momentum vectors increases.
arXiv comment12 pages, 11 figures
References in corpus (38)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Two Dimensional Atomic Crystals
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Isolation and characterization of few-layer black phosphorus
- Electric field effect in ultrathin black phosphorus
- Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
- Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
- Tunable optical properties of multilayers black phosphorus thin films
- Plasmons and screening in monolayer and multilayer black phosphorus
- Titanium trisulfide monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility
- Origin of photoresponse in black phosphorus photo-transistors
- Energy levels of triangular and hexagonal graphene quantum dots: a comparative study between the tight-binding and the Dirac approach
- Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures
- Highly Anistoropic Thermal Conductivity of Arsenene: An ab initio Study
- Landau levels of single layer and bilayer phosphorene
- Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene
- Wave packet dynamics and valley filter in strained graphene
- Mid-infrared Electro-Optic Modulation in Few-layer Black Phosphorus
- Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous
- Anisotropic exciton Stark shift in black phosphorus
- Zero-energy states in graphene quantum dots and rings
- Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus
- Multilayers black phosphorus: from tight-binding to continuum description
- Valley filtering using electrostatic potentials in bilayer graphene
- Electron optics in phosphorene pn junctions: Negative reflection and anti super-Klein tunneling
- The split-operator technique for the study of spinorial wavepacket dynamics
- All-strain based valley filter in graphene nanoribbons using snake states
- Boundary conditions for phosphorene nanoribbons in the continuum approach
- How to Distinguish between Specular and Retroconfigurations for Andreev Reflection in Graphene Rings
- Tunable plasmon-enhanced birefringence in ribbon array of anisotropic 2D materials
- Semiclassical quantization of skipping orbits
- Braess paradox at the mesoscopic scale
- Electron collimation at van der Waals domain walls in bilayer graphene
- Energy shift and conduction-to-valence band transition mediated by a time dependent potential barrier in graphene