Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Abstract

In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.

arXiv admin note: text overlap with arXiv:1401.5045 by other authors

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
• A theoretical study of blue phosphorene nanoribbons based on first-principles calculations

Cited by in corpus (4)

• Atomically thin group-V elemental films: theoretical investigations of antimonene allotropes
• A First-Principles Study on the Adsorption of Small Molecules on Arsenene: Comparison of Oxidation Kinetics in Arsenene, Antimonene, Phosphorene and InSe
• Electronic and transport properties of anisotropic semiconductor quantum wires
• Toward improved property prediction of 2D materials using many-body quantum Monte Carlo methods