Valley filtering using electrostatic potentials in bilayer graphene

Abstract

Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on both sides of the contact produce the same bias, steps in the electron transmission probability are observed, as in the usual QPC. However, if the bias is inverted on one of the sides of the QPC, only electrons belonging to one of the Dirac valleys are allowed to pass, which provides a very efficient valley filtering.

7 pages, 6 figures

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• Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry from the perspective of scattering theory
• Perfect valley filter based on topological phase in disordered $\mathrm{Sb}$ Monolayer Heterostructure
• Zitterbewegung of moiré excitons in twisted MoS${}_2$/WSe${}_2$ hetero-bilayers
• Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
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• Electron collimation at van der Waals domain walls in bilayer graphene
• Electronic and transport properties of anisotropic semiconductor quantum wires
• Quantum transport across van der Waals domain walls in bilayer graphene
• Probing valley filtering effect by Andreev reflection in zigzag graphene nanoribbon
• Tunable valley filtering in dynamically strained $\alpha$-${\mathcal{T}}_3$ lattices
• A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
• Gate-tunable valley currents, non-local resistances and valley accumulation in bilayer graphene nanostructures
• Confined states in graphene quantum blisters
• Valley filters, accumulators, and switches induced in graphene quantum dots by lines of adsorbed hydrogen atoms
• Evanescent-mode-assisted Klein tunneling in dual-gated bilayer graphene