Electrostatically confined Quantum Rings in bilayer Graphene
arXiv:0908.2831 · doi:10.1021/nl902302m
Abstract
We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field () dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a transformation and, for a fixed total angular momentum index , their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anti-crossings, which arise due to the overlap of gate-confined and magnetically-confined states.
5 pages, 6 figures, to appear in Nano Letters
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- Interplay of the Aharonov-Bohm effect and Klein tunneling in graphene
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- Topological confinement in graphene bilayer quantum rings
- Isolated and hybrid bilayer graphene rings
- Effect of magnetic field on the electronic properties of an - ring
- Robustness of persistent currents in two-dimensional Dirac systems with disorders
- Relativistic fermion on a ring: Energy spectrum and persistent current
- Persistent current of relativistic electrons on a Dirac ring in presence of impurities
- Confined states in graphene quantum blisters
- Electronic Properties of Graphene Quantum Ring with Wedge Disclination
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- SUSY design of smooth quantum rings in graphene
- Electronic properties of bilayer graphene with magnetic quantum structures studied using the Dirac equation
- Trivial and topological bound states in bilayer graphene quantum dots and rings
- Quantum tunneling in graphene Corbino disk in a solenoid magnetic potential with wedge disclination
- Electrostatic tuning of bilayer graphene edge modes