Controlled generation of a pn-junction in a waveguide integrated graphene photodetector

Abstract

With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual-gate to create a pn-junction in the optical absorption region of the device. While at zero bias the photo-thermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB-bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.

19 pages, 16 figures

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Ultrahigh electron mobility in suspended graphene
• Graphene photodetectors for high-speed optical communications
• Universal dynamical conductance in graphite
• Photoconductivity of biased graphene
• Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
• Intrinsic response time of graphene photodetectors
• Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating
• High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
• Competing Channels for Hot Electron Cooling in Graphene

Cited by in corpus (22)

• Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
• Plasmonically enhanced graphene photodetector featuring 100 GBd, high-responsivity and compact size
• Waveguide-integrated, plasmonic enhanced graphene photodetectors
• Ultra-compact graphene plasmonic photodetector with the bandwidth over 110GHz
• Hot carriers in graphene -- fundamentals and applications
• The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
• High-responsivity graphene photodetectors integrated on silicon microring resonators
• Photo Thermal Effect Graphene Detector Featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 Direct Detection
• Graphene photodetector integrated on a photonic crystal defect waveguide
• Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides
• Graphene photodetectors with a bandwidth larger than 76 GHz fabricated in a 6 inch wafer process line
• Plasmonic graphene photodetector based on channel photo-thermoelectric effect
• Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride
• Microscopic origin of the bolometric effect in graphene
• Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing
• Optimizing the photothermoelectric effect in graphene
• The Quantum Internet: A Hardware Review
• High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures
• All-carbon approach to inducing electrical and optical anisotropy in graphene
• Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
• Geometric interference in a high-mobility graphene annulus p-n junction device
• Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors