412 citations
- RWTH Aachen UniversityDE77 papers
- Forschungszentrum JülichDE16 papers
- University of WuppertalDE16 papers
- National Institute for Materials ScienceJP11 papers
- Aixtron (Germany)DE8 papers
- Ernst Ruska CentreDE8 papers
- TU WienAT8 papers
- Infineon Technologies (Germany)DE7 papers
- Jülich Aachen Research AllianceDE7 papers
- Universität der Bundeswehr MünchenDE7 papers
- University of SiegenDE7 papers
- KTH Royal Institute of TechnologySE5 papers
92 papers
Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies
Carl-Frederik Grimpe, Anastasiia Lüßmann-Sorokina, Guochun Du +10
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Unraveling the dynamics of conductive filaments in MoS based memristors by operando transmission electron microscopy
Ke Ran, Janghyun Jo, Sofía Cruces +4
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…