activity
19982024
most citedMonolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

130 citations · 486 across the 13 of their papers we have counts for

collaborators

13 papers

physics.optics2024★ 4 cited

Integrated, ultrafast all-optical polariton transistors with sub-wavelength grating microcavities

Pietro Tassan, Darius Urbonas, Bartos Chmielak +7

All-optical logic has the potential to overcome the operation speed barrier that has persisted in electronic circuits for two decades. However, the development of scalable architec…

cond-mat.mes-hall2023★ 2 cited

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel +11

Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attribu…

physics.app-ph2023★ 49 cited

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Lukas Völkel, Dennis Braun, Melkamu Belete +8

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…

physics.app-ph2019★ 43 cited

A verified equivalent-circuit model for slotwaveguide modulators

Heiner Zwickel, Stefan Singer, Clemens Kieninger +7

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave sili…

physics.app-ph2019★ 36 cited

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Melkamu Belete, Satender Kataria, Aykut Turfanda +4

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…

physics.app-ph2019★ 130 cited

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Piotr J Cegielski, Anna Lena Giesecke, Stefanie Neutzner +11

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs…

physics.app-ph2018★ 3 cited

Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications

Piotr Jacek Cegielski, Jens Bolten, Jung Wuk Kim +5

In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimp…

physics.optics2017★ 64 cited

Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication

Piotr Jacek Cegielski, Stefanie Neutzner, Caroline Porschatis +8

Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifeti…

physics.optics2014

Reflective Arrayed Waveguide Grating with Sagnac Loop Reflectors in Silicon-on-Insulator with Gaussian Pass-band

Bernardo Gargallo, Pascual Muñoz, Rocío Baños +4

In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm i…

physics.optics2014★ 22 cited

Novel layout for reflective arrayed waveguide gratings based on Sagnac loop reflectors with custom spectral response

Bernardo Gargallo, Pascual Muñoz

A novel layout for a reflective Arrayed Waveguide Grating is presented in this paper. The device consists of one half of a regular AWG where each arm waveguide in the array is term…

cond-mat.mtrl-sci2008★ 113 cited

Mobility in Graphene Double Gate Field Effect Transistors

M. C. Lemme, T. J. Echtermeyer, M. Baus +5

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for gr…

physics.bio-ph2008★ 20 cited

Surface modified silicon nanochannel for urea sensing

Yu Chen, Xihua Wang, Mi Hong +2

Silicon nanowires have been surface functionalized with the enzyme urease for biosensor applications to detect and quantify urea concentration. The device is nanofabricated from a…

cond-mat.supr-con1998

Observation of magnetic order in La_{1.9}Sr_{0.1}CuO_{4} from two-magnon Raman scattering

Y. Lin, J. Sichelschmidt, J. E. Eldridge +2

We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. Th…