A verified equivalent-circuit model for slotwaveguide modulators

Abstract

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators.

References in corpus (4)

• Ultra-High Electro-Optic Activity Demonstrated in a Silicon-Organic Hybrid (SOH) Modulator
• Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying
• Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices
• Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Cited by in corpus (1)

• Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 GBd PAM4 Signaling With Sub-1 dB Phase-Shifter Loss