Multiparameter admittance spectroscopy for investigating defects in MoS thin film MOSFETs
arXiv:2407.07783 · doi:10.1109/TED.2025.3527413
Abstract
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS channels exposed to atmospheric conditions, the existence of electron traps in MoS and at the interface between the gate insulator and the thin-film MoS are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.
24 pages