22 citations · 69 across the 6 of their papers we have counts for
7 papers
Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran +17
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…
Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…
Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics
Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…
Multiparameter admittance spectroscopy for investigating defects in MoS thin film MOSFETs
Eros Reato, Ardeshir Esteki, Benny Ku +4
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating sample…