M. Heuken

most citedZero Bias Power Detector Circuits based on MoS

_{2}

Field Effect Transistors on Wafer-Scale Flexible Substrates

28 citations · 49 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2022★ 28 cited

Zero Bias Power Detector Circuits based on MoS $_{2}$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Eros Reato, Paula Palacios, Burkay Uzlu +13

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS $_{2}$ field effect transistors (FETs). The MoS $_{2}$ …

physics.app-ph2021★ 21 cited

Vertical GaN Devices: Process and Reliability

Shuzhen You, Karen Geens, Matteo Borga +14

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…

Zero Bias Power Detector Circuits based on MoS2​ Field Effect Transistors on Wafer-Scale Flexible Substrates

Vertical GaN Devices: Process and Reliability

Zero Bias Power Detector Circuits based on MoS $_{2}$ Field Effect Transistors on Wafer-Scale Flexible Substrates