28 citations · 72 across the 9 of their papers we have counts for
9 papers
Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Max Bergmann, Jürgen Belz, Oliver Maßmeyer +12
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer si…
A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures
Oliver Maßmeyer, Jürgen Belz, Badrosadat Ojaghi Dogahe +9
Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs),…
Button Shear Testing for Adhesion Measurements of 2D Materials
Josef Schätz, Navin Nayi, Jonas Weber +13
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak…
Comprehensive evidence of lasing from a 2D material enabled by a dual-resonance metasurface
Isabel Barth, Manuel Deckart, Donato Conteduca +9
Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stac…
Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene
Eleonora Bonaventura, Christian Martella, Salvatore Macis +6
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, th…
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Djordje Dosenovic, Samuel Dechamps, Celine Vergnaud +10
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical prope…
Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam
Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev +10
Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials…
Zero Bias Power Detector Circuits based on MoS Field Effect Transistors on Wafer-Scale Flexible Substrates
Eros Reato, Paula Palacios, Burkay Uzlu +13
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS field effect transistors (FETs). The MoS…
Vertical GaN Devices: Process and Reliability
Shuzhen You, Karen Geens, Matteo Borga +14
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…