M. Heuken

activity

20212024

most citedZero Bias Power Detector Circuits based on MoS

_{2}

Field Effect Transistors on Wafer-Scale Flexible Substrates

28 citations · 72 across the 9 of their papers we have counts for

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Showing 2022Show all

2 papers · 1 filter

physics.app-ph2022★ 2 cited

Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam

Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev +10

Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials…

physics.app-ph2022★ 28 cited

Zero Bias Power Detector Circuits based on MoS $_{2}$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Eros Reato, Paula Palacios, Burkay Uzlu +13

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS $_{2}$ field effect transistors (FETs). The MoS $_{2}$ …

Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam

Zero Bias Power Detector Circuits based on MoS2​ Field Effect Transistors on Wafer-Scale Flexible Substrates

Zero Bias Power Detector Circuits based on MoS $_{2}$ Field Effect Transistors on Wafer-Scale Flexible Substrates