90 citations · 173 across the 5 of their papers we have counts for
5 papers
Multiparameter admittance spectroscopy for investigating defects in MoS thin film MOSFETs
Eros Reato, Ardeshir Esteki, Benny Ku +4
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating sample…
Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes
Sarah Riazimehr, Melkamu Belete, Satender Kataria +2
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/…
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Melkamu Belete, Satender Kataria, Aykut Turfanda +4
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…
Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization
M. Belete, S. Kataria, U. Koch +5
Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage…
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Sarah Riazimehr, Satender Kataria, Rainer Bornemann +5
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such…