Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Abstract

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance.

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Cited by in corpus (11)

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• Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
• Flexible One-Dimensional Metal-Insulator-Graphene Diode
• All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
• Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes
• Evidence for local spots of viscous electron flow in graphene at moderate mobility
• CVD Graphene Contacts for Lateral Heterostructure MoS${}_2$ Field Effect Transistors
• Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications
• Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
• Multiparameter admittance spectroscopy for investigating defects in MoS${}_2$ thin film MOSFETs