output
20142017
most citedTunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

170 citations

5 papers

cond-mat.mes-hall201765 cited

Graphene enhanced field emission from InP nanocrystals

L. Iemmo, A. Di Bartolomeo, F. Giubileo +6

We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP n…

cond-mat.mes-hall201740 cited

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Mehrdad Shaygan, Martin Otto, Abhay A. Sagade +4

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The…

cond-mat.mes-hall201661 cited

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…

cond-mat.mes-hall2016170 cited

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…

physics.optics20144 cited

Numerical Simulation of Grating Couplers for Mode Multiplexed Systems

B. Wohlfeil, S. Burger, C. Stamatiadis +4

A numerical investigation of a two dimensional integrated fiber grating coupler capable of exciting several LP fiber modes in both TE and TM polarization is presented. Simulation r…