146 citations · 647 across the 12 of their papers we have counts for
12 papers
Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción +6
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they…
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
David Stark, Muhammad Mirza, Luca Persichetti +15
We report electroluminescence originating from L-valley transitions in n-type Ge/SiGe quantum cascade structures centered at 3.4 and 4.9 THz with a line broadenin…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T. Grange, D. Stark, G. Scalari +9
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain pr…
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
A. Sammak, D. Sabbagh, N. W. Hendrickx +10
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positi…
Gate-controlled quantum dots and superconductivity in planar germanium
N. W. Hendrickx, D. P. Franke, A. Sammak +9
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the d…
Bottom-up assembly of metallic germanium
G. Scappucci, W. M. Klesse, L. A. Yeoh +7
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these r…
Influence of encapsulation temperature on Ge:P delta-doped layers
G. Scappucci, G. Capellini, M. Y. Simmons
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth te…
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
G. Scappucci, G. Capellini, W. C. T. Lee +1
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist…
Ultra-dense phosphorus in germanium delta-doped layers
G. Scappucci, G. Capellini, W. C. T. Lee +1
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed…