146 citations · 647 across the 12 of their papers we have counts for
8 papers · 1 filter
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T. Grange, D. Stark, G. Scalari +9
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain pr…
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
A. Sammak, D. Sabbagh, N. W. Hendrickx +10
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positi…
Gate-controlled quantum dots and superconductivity in planar germanium
N. W. Hendrickx, D. P. Franke, A. Sammak +9
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the d…
Influence of encapsulation temperature on Ge:P delta-doped layers
G. Scappucci, G. Capellini, M. Y. Simmons
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth te…
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
G. Scappucci, G. Capellini, W. C. T. Lee +1
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist…
Ultra-dense phosphorus in germanium delta-doped layers
G. Scappucci, G. Capellini, W. C. T. Lee +1
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed…