G. Capellini

most citedPhotoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

13 citations · 13 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2025

Brittle-to-ductile transition and strain relaxation in Si $_{1 - x}$ Ge $_{x}$ linearly graded buffers

Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5

The strain-relaxation mechanism of a set of Si $_{0.6}$ Ge $_{0.4}$ linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…

cond-mat.mes-hall2018★ 13 cited

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

M. Montanari, M. Virgilio, C. L. Manganelli +11

In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates…

Brittle-to-ductile transition and strain relaxation in Si1−x​Gex​ linearly graded buffers

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

Brittle-to-ductile transition and strain relaxation in Si $_{1 - x}$ Ge $_{x}$ linearly graded buffers