Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

Abstract

In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.

References in corpus (3)

• Atomically precise placement of single dopants in Si
• Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
• Ultra-dense phosphorus in germanium delta-doped layers

Cited by in corpus (6)

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• Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film
• Intermolecular dehalogenation reactions on passivated germanium(001)