392 citations · 2k across the 22 of their papers we have counts for
24 papers
Solid-state reaction synthesis of superconducting refractory-metal germanides for Ge/SiGe quantum devices
Sebastiaan R. Roelofs, Jan Cornelis Wolff, Nick van Loo +3
Solid-phase reactions offer a route to integrate superconductors into Ge/SiGe heterostructures, but forming high-quality superconducting layers near the buried Ge quantum well rema…
Opto-Electrical Detection of Donor Bound Excitons in Silicon-on-Insulator Substrate
A. Kanniainen, A. S. Kumar, A. Sammak +2
Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton…
Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
Marcel Meyer, Corentin Déprez, Ilja N. Meijer +6
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in…
Low disorder and high valley splitting in silicon
Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…
Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %
Kenta Takeda, Akito Noiri, Takashi Nakajima +5
Silicon-based spin qubits offer a potential pathway toward realizing a scalable quantum computer owing to their compatibility with semiconductor manufacturing technologies. Recent…
Germanium wafers for strained quantum wells with low disorder
Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti +4
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-…
Wafer-scale low-disorder 2DEG in Si/SiGe without an epitaxial Si cap
Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3
We grow Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…
CMOS-based cryogenic control of silicon quantum circuits
Xiao Xue, Bishnu Patra, Jeroen P. G. van Dijk +21
The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quant…
A two-dimensional array of single-hole quantum dots
F. van Riggelen, N. W. Hendrickx, W. I. L. Lawrie +4
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress h…
On-chip microwave filters for high-impedance resonators with gate-defined quantum dots
Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema +4
Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the reso…
Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
B. Paquelet Wuetz, P. L. Bavdaz, L. A. Yeoh +10
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit…
Fast two-qubit logic with holes in germanium
N. W. Hendrickx, D. P. Franke, A. Sammak +2
The promise of quantum computation with quantum dots has stimulated widespread research. Still, a platform that can combine excellent control with fast and high-fidelity operation…
Ballistic superconductivity and tunable -junctions in InSb quantum wells
Chung Ting Ke, Christian M. Moehle, Folkert K. de Vries +11
Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effect…
Rapid high-fidelity gate-based spin read-out in silicon
G. Zheng, N. Samkharadze, M. L. Noordam +5
Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum…
Germanium quantum well Josephson field effect transistors and interferometers
Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz +8
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realiza…
Quantum transport properties of industrial Si/SiO
D. Sabbagh, N. Thomas, J. Torres +21
We investigate the structural and quantum transport properties of isotopically enriched Si/SiO stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Hig…
Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
N. W. Hendrickx, M. L. V. Tagliaferri, M. Kouwenhoven +6
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over jun…
Gate-controlled quantum dots and superconductivity in planar germanium
N. W. Hendrickx, D. P. Franke, A. Sammak +9
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the d…
Strong spin-photon coupling in silicon
N. Samkharadze, G. Zheng, N. Kalhor +6
We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stor…
Bottom-up assembly of metallic germanium
G. Scappucci, W. M. Klesse, L. A. Yeoh +7
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these r…
Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
S. Shamim, S. Mahapatra, G. Scappucci +3
We report experimental evidence of a remarkable spontaneous time reversal symmetry breaking in two dimensional electron systems formed by atomically confined doping of phosphorus (…
Influence of encapsulation temperature on Ge:P delta-doped layers
G. Scappucci, G. Capellini, M. Y. Simmons
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth te…
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
G. Scappucci, G. Capellini, W. C. T. Lee +1
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist…
Ultra-dense phosphorus in germanium delta-doped layers
G. Scappucci, G. Capellini, W. C. T. Lee +1
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed…