Wafer-scale low-disorder 2DEG in ${}^{28}$Si/SiGe without an epitaxial Si cap

Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3

We grow ${}^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…