Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

Abstract

The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

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Cited by in corpus (6)

• Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
• Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
• Experimental online quantum dots charge autotuning using neural networks
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination
• Exact diagonalization study of double quantum dots in parallel geometry in zero-bandwidth limit