146 citations · 647 across the 12 of their papers we have counts for
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Influence of encapsulation temperature on Ge:P delta-doped layers
G. Scappucci, G. Capellini, M. Y. Simmons
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth te…
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy
G. Scappucci, G. Capellini, W. C. T. Lee +1
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist…
Ultra-dense phosphorus in germanium delta-doped layers
G. Scappucci, G. Capellini, W. C. T. Lee +1
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed…