170 citations
- Brandenburg University of Technology Cottbus-SenftenbergDE24 papers
- Roma Tre UniversityIT15 papers
- European Organization for Nuclear ResearchCH10 papers
- University of GenevaCH10 papers
- University of PisaIT9 papers
- University of SalernoIT9 papers
- Forschungszentrum JülichDE8 papers
- Technische Universität BerlinDE7 papers
- KTH Royal Institute of TechnologySE6 papers
- RWTH Aachen UniversityDE6 papers
- Istituto Nazionale di Fisica Nucleare, Roma Tor VergataIT5 papers
- CIC nanoGUNEES4 papers
Showing 2012Show all
3 papers · 1 filter
cond-mat.mes-hall2012★ 27 cited
A Graphene-based Hot Electron Transistor
Sam Vaziri, Grzegorz Lupina, Christoph Henkel +6
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially comp…
cond-mat.mes-hall2012★ 74 cited
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
A. Di Bartolomeo, S. Santandrea, F. Giubileo +7
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~…
cond-mat.mes-hall2012★ 11 cited
Molecular beam growth of graphene on mica
Gunther Lippert, Jarek Dabrowski, Yuji Yamamoto +5
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon…