output
20002026
most citedTunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

170 citations

Showing 2019Show all

5 papers · 1 filter

physics.app-ph2019★ 17 cited

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

Francesca Urban, Grzegorz Lupina, Alessandro Grillo +2

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resis…

physics.ins-det2019★ 12 cited

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

G. Iacobucci, R. Cardarelli, S. Débieux +9

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concep…

eess.SP2019★ 3 cited

Beam Entropy of 5G Cellular Millimetre-Wave Channels

Krishan Kumar Tiwari, Eckhard Grass, John S. Thompson +1

In this paper, we obtain and study typical beam entropy values for millimetre wave (mm-wave) channel models using the NYUSIM simulator for frequencies up to 100 GHz for fifth gener…

cs.IT2019★ 3 cited

Memory-assisted Statistically-ranked RF Beam Training Algorithm for Sparse MIMO

Krishan K. Tiwari, Eckhard Grass, John S. Thompson +1

This paper presents a novel radio frequency (RF) beam training algorithm for sparse multiple input multiple output (MIMO) channels using unitary RF beamforming codebooks at transmi…

cond-mat.mes-hall2019★ 77 cited

Light effective hole mass in undoped Ge/SiGe quantum wells

M. Lodari, A. Tosato, D. Sabbagh +5

We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…