A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

Abstract

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.

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Cited by in corpus (6)

• Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
• Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
• 20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
• Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
• CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology
• Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications