Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

Abstract

SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a ${}^{90}\mathrm{Sr}$ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $\mu$A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance.

References in corpus (5)

• First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors
• Time resolution of silicon pixel sensors
• 100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier
• A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
• Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

Cited by in corpus (4)

• Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
• Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
• 20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
• Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications