19 citations · 52 across the 6 of their papers we have counts for
6 papers
Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
M. Milanesio, L. Paolozzi, T. Moretti +27
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contai…
20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
S. Zambito, M. Milanesio, T. Moretti +25
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very…
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
G. Iacobucci, S. Zambito, M. Milanesio +24
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region,…
Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype
L. Paolozzi, M. Munker, R. Cardella +24
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a structure, devised to enable charged-particle tracking wi…
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
G. Iacobucci, L. Paolozzi, P. Valerio +20
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch o…
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
L. Paolozzi, R. Cardarelli, S. Débieux +12
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The…