Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Abstract

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\hat{I}¼$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9_{-0.2}^{+0.1}\right)$% was measured together with a time resolution of $(36.4\pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\hat{I}¼$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.