14 citations · 38 across the 8 of their papers we have counts for
8 papers
A Reusable Four-Port S-Parameter to Link-Level Signal-Integrity Analysis Framework for High-Speed Detector Interconnects
D M S Sultan, D. Bortoletto, R. Plackett +4
A reusable MATLAB signal-integrity (SI) framework is presented that converts compatible four-port S-parameter data, measured by VNA or obtained from electromagnetic simulation, int…
Investigation of the in-pixel response of the Mupix11 monolithic pixel sensor using a microfocus X-ray beam at Diamond Light Source
A. S. Rotelli, H. Augustin, D. Bortoletto +9
MuPix11 is a High-Voltage Monolithic Active Pixel Sensor (HV-MAPS) developed for the tracking system of the Mu3e experiment. The in-pixel photon response of a MuPix11 sensor thinne…
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
L. Paolozzi, R. Cardarelli, S. Débieux +12
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The…
MuPix and ATLASPix -- Architectures and Results
A. Schöning, J. Anders, H. Augustin +29
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS repr…
Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC
D M S Sultan, S. Gonzalez-Sevilla, D. Ferrere +5
We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feat…
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
G. Iacobucci, R. Cardarelli, S. Débieux +9
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concep…