First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors

Abstract

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $\varphi \sim$ 10${}^{15}$ n${}_{eq}$/cm${}^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.

arXiv comment16 pages, 13 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Nuclear Instruments and Methods in Physics Research A (2018)

References in corpus (4)

• Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
• Radiation resistant LGAD design
• Radiation Hardness of Thin Low Gain Avalanche Detectors
• Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

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