Radiation effects on NDL prototype LGAD sensors after proton irradiation

Abstract

We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$\times 10^{14}$ $n_{eq}/c{m}^2$ up to 4.5$\times 10^{15}$ $n_{eq}/c{m}^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_A$ = $(6.07\pm 0.70)\times 10^{-16}c{m}^2$, which indicates the NDL sensor has fairly good radiation resistance.

References in corpus (8)

• Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
• Radiation resistant LGAD design
• First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors
• Development of a technology for the fabrication of Low-Gain Avalanche Detectors at BNL
• Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector
• Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities
• Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)
• Charaterization of the first prototype IHEP-NDL LGAD sensor

Cited by in corpus (5)

• Time Resolution of the 4H-SiC PIN Detector
• Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project
• Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling
• Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons
• Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation