Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

Abstract

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 ${}^{\circ }$C after an irradiation fluence of ${\Phi }_{eq}=2.5\times 10^{15}{n}_{eq}/c{m}^2$. The charge collection efficiency (CCE) is under development.

References in corpus (7)

• Radiation resistant LGAD design
• First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors
• Development of a technology for the fabrication of Low-Gain Avalanche Detectors at BNL
• Radiation Hardness of Thin Low Gain Avalanche Detectors
• Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
• Radiation effects on NDL prototype LGAD sensors after proton irradiation
• Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)

Cited by in corpus (2)

• Design and testing of LGAD sensor with shallow carbon implantation
• Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation