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20212026
most citedTime Resolution of the 4H-SiC PIN Detector

15 citations · 22 across the 13 of their papers we have counts for

collaborators

13 papers

physics.ins-det2026

Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation

Jiaqi Zhou, Sen Zhao, Xiyuan Zhang +6

This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial verti…

hep-ex2025

Preliminary design and simulation for CEPC fast luminosity monitor detector based on 4H-SiC

Yanpeng Li, Meng Li, Xingrui Wang +8

The Circular Electron-Positron Collider (CEPC), a next-generation high-luminosity collider, employs a crab waist scheme to achieve ultrahigh $5 \times 10^{34} \, \text{cm}^{-2}\tex…

physics.ins-det2025

4H-SiC PIN detector for alpha particles from room temperature to 90 °C

Xingchen Li, Sen Zhao, Mengke Cai +5

In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems.…

physics.ins-det2025

The study of 4H-SiC LGAD after proton radiation

Sen Zhao, Jiaqi Zhou, Chenxi Fu +7

Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and ra…

physics.ins-det2025

Simulation of radiation damage effect on silicon detectors using RASER

Xingchen Li, Chenxi Fu, Hui Li +10

Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence env…

physics.ins-det2025

Mechanisms of proton irradiation-induced defects on the electrical performance of 4H-SiC PIN detectors

Zaiyi. Li, Xiyuan. Zhang, Congcong. Wang +7

Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent…

physics.ins-det2024

Charge Collection Performance of 4H-SiC LGAD

Sen Zhao, Keqi Wang, Kaibo Xie +4

The 4H-SiC material exhibits good detection performance, but there are still many problems like signal distortion and poor signal quality. The 4H-SiC low gain avalanche detector (L…

physics.acc-ph2024

High precision proton beam monitor system concept design on CSNS based on SiC

Ye He, Xingchen Li, Zijun Xu +20

A high precision beam monitor system based on silicon carbide PIN sensor is designed for China Spallation Neutron Source 1.6 GeV proton beam to monitor the proton beam fluence.The…

physics.ins-det2023

Design and simulation of a novel 4H-SiC LGAD timing device

Keqi Wang, Tao Yang, Chenxi Fu +10

Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors ofte…

physics.ins-det2023

Electric Field Measurement by Edge Transient Current Technique on Silicon Low Gain Avalanche Detector

Chenxi Fu, Haobo Wang, Tao Yang +8

A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology…

physics.ins-det2022★ 1 cited

Simulation of the 4H-SiC Low Gain Avalanche Diode

Tao Yang, Yuhang Tan, Congcong Wang +2

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diod…

physics.ins-det2021★ 6 cited

Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

Tao Yang, Kewei Wu, Mei Zhao +24

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage…

physics.ins-det2021★ 15 cited

Time Resolution of the 4H-SiC PIN Detector

Tao Yang, Yuhang Tan, Qing Liu +12

We address the determination of the time resolution for the 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to particles from a…