Time Resolution of the 4H-SiC PIN Detector

Abstract

We address the determination of the time resolution for the $100\mu \mathrm{m}$ 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to $\beta$ particles from a ${}^{90}$Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution $(94\pm 1)\mathrm{ps}$ for $100\mu \mathrm{m}$ 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed, and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is $(73\pm 1)\mathrm{ps}$ after considering the intrinsic leading contributions of the detector to time resolution.

References in corpus (6)

• Timing performance of small cell 3D silicon detectors
• First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors
• Development of a technology for the fabrication of Low-Gain Avalanche Detectors at BNL
• 100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier
• Radiation effects on NDL prototype LGAD sensors after proton irradiation
• Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)

Cited by in corpus (3)

• Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
• Simulation of radiation damage effect on silicon detectors using RASER
• Timing performance simulation for 3D 4H-SiC detector