Design and testing of LGAD sensor with shallow carbon implantation

Abstract

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates crossing the detectors at the upgraded Large Hadron Collider (LHC) in 2028 will lead to radiation damage and deteriorated performance of the LGADs. The main consequence of radiation damage is loss of gain layer doping (acceptor removal) which requires an increase of bias voltage to compensate for the loss of charge collection efficiency and consequently time resolution. The Institute of High Energy Physics (IHEP), Chinese Academy of Sciences (CAS) has developed a process based on the Institute of Microelectronics (IME), CAS capability to enrich the gain layer with carbon to reduce the acceptor removal effect by radiation. After 1 MeV neutron equivalent fluence of 2.5$\times$10${}^{15}$ n${}_{eq}$/cm${}^2$, which is the maximum fluence to which sensors will be exposed at ATLAS High Granularity Timing Detector (HGTD), the IHEP-IME second version (IHEP-IMEv2) 50 $\mu$m LGAD sensors already deliver adequate charge collection > 4 fC and time resolution < 50 ps at voltages < 400 V. The operation voltages of these 50 $\mu$m devices are well below those at which single event burnout may occur.

References in corpus (8)

• Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
• Radiation resistant LGAD design
• First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors
• Development of a technology for the fabrication of Low-Gain Avalanche Detectors at BNL
• Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
• Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project
• Experimental Study of Acceptor Removal in UFSD
• Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

Cited by in corpus (3)

• The performance of large-pitch AC-LGAD with different N+ dose
• Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons
• Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain