Effect of deep gain layer and Carbon infusion on LGAD radiation hardness

Abstract

The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.

arXiv comment13 pages, 10 figures, 16 references

References in corpus (4)

• Radiation resistant LGAD design
• Beam test measurements of Low Gain Avalanche Detector single pads and arrays for the ATLAS High Granularity Timing Detector
• Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
• Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

Cited by in corpus (7)

• Design and testing of LGAD sensor with shallow carbon implantation
• Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling
• First experimental time-of-flight-based proton radiography using low gain avalanche diodes
• Picosecond Timing Resolution Measurements of Low Gain Avalanche Detectors with a 120 GeV Proton Beam for the TOPSiDE Detector Concept
• Gain suppression study on LGADs at the CENPA tandem accelerator
• Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
• Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons