182 citations · 319 across the 13 of their papers we have counts for
13 papers
Synchrotron light source focused X-ray detection with LGADs, AC-LGADs and TI-LGADs
A. Molnar, Y. Zhao, S. M. Mazza +13
The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6-16~keV was characterized at the Stanford Sync…
Performance of neutron and proton irradiated AC-LGAD sensors
G. Stage, A. Borjigin, J. Ding +17
Characterization of strip and pixel AC-LGAD devices with both laser TCT and probe station (IV/CV) will be shown on AC-LGADs irradiated with 1 MeV reactor neutrons at JSI/Ljubljana…
Measured gain suppression in FBK LGADs with different active thicknesses
J. Yang, S. Braun, Q. Buat +16
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with…
Gain suppression study on LGADs at the CENPA tandem accelerator
S. Braun, Q. Buat, J. Ding +9
Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge i…
Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
S. M. Mazza, G. Saito, Y. Zhao +14
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLA…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Y. Zhao, N. Cartiglia, E. Estrada +13
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data re…
Radiation Hardness of Thin Low Gain Avalanche Detectors
G. Kramberger, M. Carulla, E. Cavallaro +18
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impa…
Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2
Z. Galloway, V. Fadeyev, P. Freeman +27
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used…
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
N. Cartiglia, A. Staiano, V. Sola +40
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 Ge…