182 citations · 469 across the 15 of their papers we have counts for
15 papers
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Study of neutron irradiation effects in Depleted CMOS detector structures
I. Mandić, V. Cindro, J. Debevc +12
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivitie…
Characterisation of analogue front end and time walk in CMOS active pixel sensor
B. Hiti, V. Cindro, A. Gorišek +10
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investiga…
Measurements with silicon detectors at extreme neutron fluences
I. Mandić, V. Cindro, A. Gorišek +7
Thin pad detectors made from 75 m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5 n/cm to 1$\…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Recent Results from Polycrystalline CVD Diamond Detectors
RD42 Collaboration, L. Bäni, A. Alexopoulos +109
Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical v…
Timing performance of small cell 3D silicon detectors
G. Kramberger, V. Cindro, D. Flores +8
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Y. Zhao, N. Cartiglia, E. Estrada +13
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data re…
Charge collection properties of irradiated depleted CMOS pixel test structures
I. Mandić, V. Cindro, A. Gorišek +5
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 kcm are pres…
Radiation Hardness of Thin Low Gain Avalanche Detectors
G. Kramberger, M. Carulla, E. Cavallaro +18
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impa…
Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2
Z. Galloway, V. Fadeyev, P. Freeman +27
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used…
Neutron irradiation test of depleted CMOS pixel detector prototypes
Igor Mandić, Vladimir Cindro, Andrej Gorišek +11
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kcm initial resistivity (by LFoundry 150 nm process) were studied using…
Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
B. Hiti, V. Cindro, A. Gorišek +8
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential cand…
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
N. Cartiglia, A. Staiano, V. Sola +40
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 Ge…