182 citations · 469 across the 15 of their papers we have counts for
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physics.ins-det2018★ 17 cited
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
physics.ins-det2018★ 23 cited
Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Y. Zhao, N. Cartiglia, E. Estrada +13
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data re…
physics.ins-det2018★ 20 cited
Charge collection properties of irradiated depleted CMOS pixel test structures
I. Mandić, V. Cindro, A. Gorišek +5
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 kcm are pres…