63 citations · 70 across the 4 of their papers we have counts for
15 papers · 1 filter
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Study of neutron irradiation effects in Depleted CMOS detector structures
I. Mandić, V. Cindro, J. Debevc +12
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivitie…
Characterisation of analogue front end and time walk in CMOS active pixel sensor
B. Hiti, V. Cindro, A. Gorišek +10
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investiga…
Measurements with silicon detectors at extreme neutron fluences
I. Mandić, V. Cindro, A. Gorišek +7
Thin pad detectors made from 75 m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5 n/cm to 1$\…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Recent Results from Polycrystalline CVD Diamond Detectors
RD42 Collaboration, L. Bäni, A. Alexopoulos +109
Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical v…